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Evaporation Table

NAME
SYMBOL
MELTING POINT 0˚C
DENSITY
g/cc
10^-8
TORR
10^-6
TORR
10^-4
TORR
LINER
NOTES N=INDEX OF
REFRACTION
Aluminum Al 660 2.70 677 821 1010 BN, CG Alloys and wets

May fill volume 70%  (1)

Aluminum

Carbide

Al4C3 1400 2.36  800 N=2.7 (3)
Aluminum Floride AlF3 1257

Subl.

3.07 410

Subl.

490

Subl.

700

Subl.

G, W, MO N=1.38 @ .55µ (4)
Aluminum Nitride AlN Subl. 3.26  1750 Decomposes Reactive evaporate

in 10-3N2 with glow discharge (3)

Aluminum Oxide (alumina) Al2O3 2045 3.97 1500 N=1.66 forms

smooth hard films (1)

Antimony Sb 630 6.68 279

Subl.

345

Subl.

425

Subl.

BN, G, Al2O3 Toxic. Evaporates well, film structure

is rate-dependent (1)

Antimony Trioxide Sb2O3 656 5.2 or 5.76 Subl. Subl. Subl. BN, Al2O3 Toxic, decomposes on W.n=2.05 (3)
Antimony Trisulphide Sb2S3 550 4.64  200 Al2O3 N=3.01 @ .55µ

No decomposition (3)

Arsenic As 814 5.73 107

Subl.

150

Subl.

210

Subl.

Al2O3 CG Toxic. Sublimes

rapidly at low temp. (4)

Arsenic

Trisulphide

As2S3 300 3.43  400 Al2O3 N=2.8 (3)
Barium Ba 710 3.78 545 627 735 MO Wets w/o alloying-

reacts with ceramics (3)

Barium Floride BaF2 1280 4.83 Subl. Subl.  700

Subl.

N=1.29 @ 5µ

Density rate dependent (2)

Barium Oxide BaO 1923 5.72 or 5.32  300 Al2O3 Decomposes slightly n=1.98 (4)
Beryllium Be 1278 1.85 710 875 100 G, CG Wets W, Mo, Ta metal powders and oxides are toxic (1)
Beryllium Fluoride BeF2 800 1.99 Subl. Subl.  200 Toxic (2)
Beryllium Oxide BeO 2530 3.01 1900 Powders are toxic. No decomposition

n=1.72 (2)

Bismuth Bi 271 9.80 330 410 520 CG, Al2O3 Vapors are toxic. (1)
Bismuth Oxide Bi2O3 820 8.90  1400 Vapors are toxic. N=2.55 (1)
Boron B 2100 2.36 1278

Subl.

1548

Subl.

1797

Subl.

G Material explodes with rapid cooling. Forms carbide with

container (1)

Boron Carbide B4C 2350 2.50 2500 2580 2650 Similar to chromium. (1)
Boron Nitride BN 2300 2.20 Subl. Subl.  1600

Subl.

Decomposes. (4)
Boron Oxide B2O3 460 1.82  1400 N=1.46 (2)
Cadmium Cd 321 8.64 64 120 180 Al2O3 Poisons vacuum system, low

sticking coefficient. (4)

Cadmium

Selenide

CdSe 1264 5.81 Subl. Subl. 540

Subl.

Al2O3 Evaporates easily.

N=2.4 @ .6µ (2)

Cadmium Sulfide CdS 1750 4.82 Subl. Subl. 550

Subl.

Al2O3 Sticking coeffiient strongly effected by substrate temp. Stoichiometry

variable. N=2.4

Calcium Ca 842 1.55 272

Subl.

357

Subl.

459

Subl.

Al2O3 Corrodes in air. (4)
Calcium Fluoride CaF2 1360 3.18  1100 Rate control important. Use gentle preheat to

outgas. N=1.2-1.4 (1)

Calcium

Silicate

CaO-SiO2 1540 2.90 N=1.61 (2)
Calcium Tungstate CaWO4 1620 6.06 N=1.92 (2)
Carbon C Subl. 1.80-2.30 1657

Subl.

1867

Subl.

2137

Subl.

Poor film adhesion

(1)

Cerium Ce 795 8.23 970 1150 1380 CG, Al2O3 Film oxide easily (2)
Ceric Oxide CeO2 2600 7.30 1890

Subl.

2000

Subl.

2310

Subl.

Use 250-300˚C

substrate temperature n=2.2-2.4. Reacts with W (2)

Cerium Fluoride CeF3 1418 6.16  900 Use gentle preheat to outgas. N=1.63 @ .55µ (2)
Chromium Cr 1890 7.20 837

Subl.

977

Subl.

1157

Subl.

CG Films very adherent. High

rates possible. (2)

Chromium Carbide CR3C2 1890 6.68  2000 (3)
Chromium Oxide Cr2O3 2435 5.21  2000 Disproportionate to lower oxides,

reoxides @ 600˚C in air n=2.4 (2)

Cobalt Co 1495 8.90 850 990 1200 Al2O3 Alloys with refractory metals. (1)
Copper Cu 1083 8.92 727 857 1017 Ta,

Mo, Al2O3

Films do not adhere well. Use intermediate layer, e.g., chromium. (1)
Copper Oxide Cu2o 1235 6.00 Subl. Subl.  600

Subl.

Al2O3 Evaporate in 10-2– 10-2 of O2; n=2.70

(2)

Cryolite Na3AlF6 1000 2.90 1020 1260 1480 CG Large chunks reduce splitting. Little decomposition.

N=2.34 @ 6330Å (1)

Dysposium Dy 1409 8.54 625 750 900 (2)
Dysprosium

Fluoride

DyF3 1360 Subl. Subl.  800 (2)
Erbium Er 1497 9.06 650

Subl.

775

Subl.

930

Subl.

(2)
Europium Eu 822 5.26 280

Subl.

360

Subl.

480

Subl.

Al2O3 (3)
Europium Oxide Eu2O3 2056 7.42  1600 Loses oxygen; iflms hard and

clear. (2)

Gadolinium Gd 1312 7.89 760 900 1175 Al2O3 High Ta Solubility (1)
Gadolinium

Oxide

Gd2O3 2310 7.41 Loses oxygen.

N=1.8 @ .55µ (3)

Gallium Ga 30 5.90 619 742 907 Al2O3 Alloys with

refractory metals. (2)

Galliuim Antimonide GaSb 710 5.60 (3)
Gallium Arsenide GaAs 1238 5.30 CG, G N=5.64 @ 10.6 (2)
Germanium Ge 937 5.35 812 957 1167 Al2O3 Excellent films.

N=4.01 (1)

Germanium Oxide GeO2 1086 6.24  625 Al2O3,

Quartz

Film

predominantly GeO (2)

Glass Schott 8329 2.20 Evaporate alkali glass. Melt in air before evaporating. N=1.47 (1)
Gold Au 1062 19.32 807 947 1132 CG,

BN, Al2O3

Films soft, not very adherent (1)
Hafnium Hf 2230 13.09 2160 2250 3090 (2)
Hafnium Oxide HfO2 2812 9.68  2500 Film HhfO n=2.0 @ .5µ (3)
Holmium Ho 1470 8.80 650

Subl.

770

Subl.

950

Subl.

(2)
Inconel Ni/Cr/Fe 1425 8.50 Low rate required for smooth film. (2)
Indium In 157 7.30 487 597 742 Mo Wets W and Cu; use Mo liner. (1)
Indium Oxide In2O3 1565 7.18 Subl. Subl.  1200

Subl.

Al2O3 Film In2O transparent

conductor (2)

Iridium Ir 2459 22.65 1850 2080 2380 (3)
Iron Fe 1535 7.86 858 998 1180 Al2O3 Attacks W. films hard, smooth. Use gentle preheat to

outgas. (1)

Iron Oxide FeO 1425 5.70 Decomposes. (1)
Iron Oxide Fe2O3 1565 5.24 Disproportionate

to Fe3O4 at 1530C n=3.0. (2)

Lanthanum La 920 6.17 990 1212 1388 Al2O3 Films will burn in air if scraped. (1)
Lanthanum

Boride

LaB6 2210 2.61 (2)
Lanthanum Fluoride LaF3 1490 6.0 Subl. Subl. 900

Subl.

No decomposition

n=1.59 @ .55µ (2)

Lanthanum

Oxide

La2O3 2250 5.84 5.84 1400 Loses Oxygen

n=1.9 @ .5µ (2)

Lead Pb 328 11.34 342 427 497 Al2O3 Toxic. Carefully controlled rates

required for superconductors. (1)

Lithium Li 179 0.53 227 307 407 Al2O3 Metal reacts

violently in air. (2)

Lithium Fluoride LiF 870 2.60 875 1020 1180 Al2O3 Rate control important for optical films. Use gentle preheat to

outgas. N=1.36 (2)

Lutetium Lu 1652 9.84 1300 Al2O3 (1)
Magnesium Mg 651 1.74 185

Subl.

247

Subl.

327

Subl.

CG, Al2O3 Extremely high rates possible. (2)
Magnesium Aluminate MgAl2O4 2135 3.60 Natural spinel. (2)
Magnesium Fluoride MgF2 1266 2.90-3.20 100 Al2O3 Rate control and substrate heat important for optical films.

N=1.38 (1)

Magnesium Oxide MgO 2800 3.58 1300 CG, G Al2O3 W produces

volatile oxides. N=1.7 (2)

Manganese Mn 1244 7.20 507

Subl.

572

Subl.

647

Subl.

Al2O3 (2)
Molybdenum Mo 2610 10.22 1592 1822 2117 Films hard smooth.

Careful degas required. (1)

Molybdenum

Boride

MoB2 2100 7.12 (4)
Molybdenum Carbide Mo2C 2687 9.18 Evaporation of

Mo(Co)6 yields Mo2C

Neodymium Nd 1024 7.00 7.31 871 1062 Al2O3 Low Ta solubility.

(1)

Neodymium Fluoride NdF3 1410 6.50  900 Al2O3 Very little decomposition.

N=1.61 @ .55µ (2)

Neodymium Oxide Nd2O3 2272 7.24  1400 Loses Oxygen, films clear.

Hydroscopic n=1.79 n varies

with substrate temp. (2)

Nichrome IV Ni/Cr 1395 8.50 847 987 1217 CG, Al2O3 Alloys with refractory metals. (1)
Nickel Ni 1453 8.90 927 1072 1262 CG, Al2O3 Alloys with refractory metals. Forms smooth

adherent films. (1)

Niobium (Columbium) Nb 2468 8.55 1728 1977 2287 Attacks W. (1)
Niobium

Carbide

NbC 3800 7.82 (3)
Niobium –– Tin Nb3Sn Co-evaporate from two sources. (1)
Osmium Os 1700 22.50 2170 2430 2760 (3)
Palladium Pd 1550 12.40 842 992 1192 Al2O3 Alloys with refractory metals;

rapid evaporation suggested. Spits. (1)

Permalloy Ni/F 1395 8.70 947 1047 1307 CG, Al2O3 Films low in Ni content use 84%

Ni source. (2)

Platinum Pt 1769 21.45 1292 1492 1747 CG Alloys with metals.

Films soft poor adhesion. (1)

Potassium

Chloride

KCl 776 1.98 510 Use gentle preheat

to outgas. n=1.49 (2)

Potassium Fluoride KF 880 2.48  500 Use gentle preheat to outgas. n=1.49 (2)
Praseodymium Pr 931 6.78 800 950 1150 (2)
Praseodymium

Oxide

Pr2O3 2125 6.88 1400 Loses Oxygen.

N=2.0 (2)

Rhenium Re 3180 20.53 1928 2207 2571 (1)
Rhodium Rh 1966 12.41 1277 1472 1707 CG (2)
Ruthenium Ru 2700 12.45 1780 1990 2260 Splits violently. Requires degas. (1)
Samarium Sm 1072 7.54 373 460 573 Al2O3 (2)
Samarium Oxide Sm2O3 2350 7.43 Loses O2 Films smooth, clear. (2)
Samarium

Sulfide

Sm2S3 1900 5.72 (2)
Scandium Sc 1539 2.99 714 837 1002 Al2O3 Alloys with Ta (1)
Scandium Oxide 2300 8.86  400 Loses Oxygen

n=1.88 @ .5µ (3)

Selenium Se 217 4.79 89 125 170 CG, Al2O3 Toxic. Poisons vacuum systems. (2)
Silicon Si 1410 2.42 992 1147 1337 CG, Ta Alloys with W. SiO produced above 4X10-6torr.

N=3.42 (3)

Silicon Boride SiB6 2.47 (4)
Silicon Dioxide SiO2 1610-1710 2.20-2.70  1025 N=1.47 Tunnels must be swept. (1)
Silicon Monoxide SiO 1702 2.10 Subl. Subl. 850

Subl.

Ta Low rate suggested.

N=1.6 (3)

Silver Ag 961 10.49 847

958

1105 Mo, Al2O3 (1)
Sodium

Chloride

NaCl 801 2.16 530 N=1.54 (2)
Sodium Fluoriide NaF 988 2.79  700 Use gentle preheat. No decomposition.

n=1.30 @ .55µ (2)

Spinel MgO3 5Al2O3 8.00 N=1.72 (2)
Strontium Sr 769 2.60 239 309 403 CG Wets but does not alloy refractory metals. May react violently in air.
Sulfur S8 115 2.00 13 19 57 Poisons vacuum system. (1)
Supermalloy Ni/Fe/Mo 1410 8.90 Co-evaporate from two sources, Prmalloy and Mo.

(2)

Tantalum Ta 2996 16.60 1960 2240 2590 Forms good films. (1)
Tantalum Pentoxide Ta2O5 1800 8.74 1550 1780 1920 CG Slight decomposition; evaporate in 10-3 torr of O2 n=2.0 @1.5µ (2)
Tellurium Te 452 6.25 157 207 277 Al2O3 Wets w/o alloying Toxic (4)
Terbium Tb 1357 8.27 800 850 1150 Al2O3 (1)
Thallium Tl 302 11.85 280 360 470 Al2O3 Wets freely, very

toxic. (1)

Thorium Th 1875 11.70 1430 1660 1925 Toxic, radioactive. (1)
Thorium Dioxide ThO2 3050 10.03  2100 Radioactive.

N=1.86 @ 2.2µ (1)

Thorium Fluoride ThF4 1110 6.30  750 CG Radioactive n=1.52 Heat substrate to above

1500C (3)

Thulium Tm 1545 9.32 461

Subl.

554

Subl.

680

Subl.

Al2O3 (2)
Tin Sn 232 7.75 682 807 997 Ta, Al2O3 Wets Mo, use Ta liner. (1)
Tin Oxide SnO2 1127 6.95 Subl. Subl.  1000

Subl.

Al2O3 N=2.0 (1)
Tin Selenide SnSe 861 6.18  400 (2)
Titanium Ti 1675 4.50 1067 1235 1453 Alloys with refractory metals;

evolves gas on first heating. (1)

Titanium

Boride

TiB2 2980 4.50 (4)
Titanium Dioxide (rutile) TiO2 1640 4.29  1300 Evaporate in 10-4

of O2 onto 350 C substrates. N=2.4 (3)

Titanium Monoxide TiO 1750 4.93  1500 CG Use gentle preheat to outgas. (2)
Titanium Nitride TiN 2930 5.43 Decomposes. (2)
Tungsten W 3410 19.30 2117 2407 2757 Forms violate oxides. Films hard

& adherent. (2)

Tungsten Carbide W2C 2860 17.15 1480 1720 2120 (1)
Tungsten Trioxide WO3 1473 7.16 Subl. Subl. 980

Subl.

Use gentle preheat to outgas. n=1.68

(2)

Uranium U 1132 19.07 1132 1327 1582 Films oxidize. (2)
Vanadium V 1890 5.96 1162 1332 1547 Wets Mo. (1)
Ytterbium Yb 824 6.98 520

Subl.

590

Subl.

690

Subl.

(2)
Yttrium Y 1509 4.48 830 973 1157 Al2O3 High Ta solubility.

(1)

Yttrium

Aluminum Oxide

Y3Al5O12 1990 Films not ferroelectric
Yttrium Oxide Y2O3 2680 4.84 Subl. Subl.  2000 Al2O3, G Loses oxygen, films smooth and clear. N=1.79 @

(2)

Zinc Zn 419 7.14 127 177 250 Al2O3 (1)
Zinc Oxide ZnO 1975 5.61  1800 Anneal in air at 450C to reoxidize. N=2.0

(3)

Zinc Sulfide ZnS 1830 4.09 Subl. Subl.  800 Use gentle preheat to gegas. Films partle decompose Sticking coefficient varies with substrate

temp. n=2.3 @ .5µ (2)

Zirconium Zr 1852 6.40 1477 1702 1987 Alloys with W. Films oxide

readily. (1)

Zirconium Boride ZrB2 3040 6.08 (2)
Zirconium Oxide ZrO2 2700 5.49  2200 Films oxide deficient, clear and hard. N=2.05 @ .75µ (2)

 

Legend

(1) Excellent material for electron beam evaporation.

(2) Good material for electron beam evaporation.

(3) Fair material for electron beam evaporation.

(4) Poor material for electron beam evaporation.

Subl. Subliming Material n Index of Refraction
G Graphite Liner
CG Coated Graphite Liner Al2O3 Alumina Liner
BN Boron Nitride Liner Mo Molybdenum Liner Ta Tantalum Liner