NAME |
SYMBOL |
MELTING POINT 0˚C |
DENSITYg/cc |
10^-8TORR |
10^-6TORR |
10^-4TORR |
LINER |
NOTES N=INDEX OFREFRACTION |
Aluminum | Al | 660 | 2.70 | 677 | 821 | 1010 | BN, CG | Alloys and wets
May fill volume 70% (1) |
Aluminum
Carbide |
Al4C3 | 1400 | 2.36 | 800 | N=2.7 (3) | |||
Aluminum Floride | AlF3 | 1257
Subl. |
3.07 | 410
Subl. |
490
Subl. |
700
Subl. |
G, W, MO | N=1.38 @ .55µ (4) |
Aluminum Nitride | AlN | Subl. | 3.26 | 1750 | Decomposes Reactive evaporate
in 10-3N2 with glow discharge (3) |
|||
Aluminum Oxide (alumina) | Al2O3 | 2045 | 3.97 | 1500 | N=1.66 forms
smooth hard films (1) |
|||
Antimony | Sb | 630 | 6.68 | 279
Subl. |
345
Subl. |
425
Subl. |
BN, G, Al2O3 | Toxic. Evaporates well, film structure
is rate-dependent (1) |
Antimony Trioxide | Sb2O3 | 656 | 5.2 or 5.76 | Subl. | Subl. | Subl. | BN, Al2O3 | Toxic, decomposes on W.n=2.05 (3) |
Antimony Trisulphide | Sb2S3 | 550 | 4.64 | 200 | Al2O3 | N=3.01 @ .55µ
No decomposition (3) |
||
Arsenic | As | 814 | 5.73 | 107
Subl. |
150
Subl. |
210
Subl. |
Al2O3 CG | Toxic. Sublimes
rapidly at low temp. (4) |
Arsenic
Trisulphide |
As2S3 | 300 | 3.43 | 400 | Al2O3 | N=2.8 (3) | ||
Barium | Ba | 710 | 3.78 | 545 | 627 | 735 | MO | Wets w/o alloying-
reacts with ceramics (3) |
Barium Floride | BaF2 | 1280 | 4.83 | Subl. | Subl. | 700
Subl. |
N=1.29 @ 5µ
Density rate dependent (2) |
|
Barium Oxide | BaO | 1923 | 5.72 or 5.32 | 300 | Al2O3 | Decomposes slightly n=1.98 (4) | ||
Beryllium | Be | 1278 | 1.85 | 710 | 875 | 100 | G, CG | Wets W, Mo, Ta metal powders and oxides are toxic (1) |
Beryllium Fluoride | BeF2 | 800 | 1.99 | Subl. | Subl. | 200 | Toxic (2) | |
Beryllium Oxide | BeO | 2530 | 3.01 | 1900 | Powders are toxic. No decomposition
n=1.72 (2) |
|||
Bismuth | Bi | 271 | 9.80 | 330 | 410 | 520 | CG, Al2O3 | Vapors are toxic. (1) |
Bismuth Oxide | Bi2O3 | 820 | 8.90 | 1400 | Vapors are toxic. N=2.55 (1) | |||
Boron | B | 2100 | 2.36 | 1278
Subl. |
1548
Subl. |
1797
Subl. |
G | Material explodes with rapid cooling. Forms carbide with
container (1) |
Boron Carbide | B4C | 2350 | 2.50 | 2500 | 2580 | 2650 | Similar to chromium. (1) | |
Boron Nitride | BN | 2300 | 2.20 | Subl. | Subl. | 1600
Subl. |
Decomposes. (4) | |
Boron Oxide | B2O3 | 460 | 1.82 | 1400 | N=1.46 (2) | |||
Cadmium | Cd | 321 | 8.64 | 64 | 120 | 180 | Al2O3 | Poisons vacuum system, low
sticking coefficient. (4) |
Cadmium
Selenide |
CdSe | 1264 | 5.81 | Subl. | Subl. | 540
Subl. |
Al2O3 | Evaporates easily.
N=2.4 @ .6µ (2) |
Cadmium Sulfide | CdS | 1750 | 4.82 | Subl. | Subl. | 550
Subl. |
Al2O3 | Sticking coeffiient strongly effected by substrate temp. Stoichiometry
variable. N=2.4 |
Calcium | Ca | 842 | 1.55 | 272
Subl. |
357
Subl. |
459
Subl. |
Al2O3 | Corrodes in air. (4) |
Calcium Fluoride | CaF2 | 1360 | 3.18 | 1100 | Rate control important. Use gentle preheat to
outgas. N=1.2-1.4 (1) |
|||
Calcium
Silicate |
CaO-SiO2 | 1540 | 2.90 | N=1.61 (2) | ||||
Calcium Tungstate | CaWO4 | 1620 | 6.06 | N=1.92 (2) | ||||
Carbon | C | Subl. | 1.80-2.30 | 1657
Subl. |
1867
Subl. |
2137
Subl. |
Poor film adhesion
(1) |
|
Cerium | Ce | 795 | 8.23 | 970 | 1150 | 1380 | CG, Al2O3 | Film oxide easily (2) |
Ceric Oxide | CeO2 | 2600 | 7.30 | 1890
Subl. |
2000
Subl. |
2310
Subl. |
Use 250-300˚C
substrate temperature n=2.2-2.4. Reacts with W (2) |
|
Cerium Fluoride | CeF3 | 1418 | 6.16 | 900 | Use gentle preheat to outgas. N=1.63 @ .55µ (2) | |||
Chromium | Cr | 1890 | 7.20 | 837
Subl. |
977
Subl. |
1157
Subl. |
CG | Films very adherent. High
rates possible. (2) |
Chromium Carbide | CR3C2 | 1890 | 6.68 | 2000 | (3) | |||
Chromium Oxide | Cr2O3 | 2435 | 5.21 | 2000 | Disproportionate to lower oxides,
reoxides @ 600˚C in air n=2.4 (2) |
|||
Cobalt | Co | 1495 | 8.90 | 850 | 990 | 1200 | Al2O3 | Alloys with refractory metals. (1) |
Copper | Cu | 1083 | 8.92 | 727 | 857 | 1017 | Ta,
Mo, Al2O3 |
Films do not adhere well. Use intermediate layer, e.g., chromium. (1) |
Copper Oxide | Cu2o | 1235 | 6.00 | Subl. | Subl. | 600
Subl. |
Al2O3 | Evaporate in 10-2– 10-2 of O2; n=2.70
(2) |
Cryolite | Na3AlF6 | 1000 | 2.90 | 1020 | 1260 | 1480 | CG | Large chunks reduce splitting. Little decomposition.
N=2.34 @ 6330Å (1) |
Dysposium | Dy | 1409 | 8.54 | 625 | 750 | 900 | (2) | |
Dysprosium
Fluoride |
DyF3 | 1360 | Subl. | Subl. | 800 | (2) | ||
Erbium | Er | 1497 | 9.06 | 650
Subl. |
775
Subl. |
930
Subl. |
(2) | |
Europium | Eu | 822 | 5.26 | 280
Subl. |
360
Subl. |
480
Subl. |
Al2O3 | (3) |
Europium Oxide | Eu2O3 | 2056 | 7.42 | 1600 | Loses oxygen; iflms hard and
clear. (2) |
|||
Gadolinium | Gd | 1312 | 7.89 | 760 | 900 | 1175 | Al2O3 | High Ta Solubility (1) |
Gadolinium
Oxide |
Gd2O3 | 2310 | 7.41 | Loses oxygen.
N=1.8 @ .55µ (3) |
||||
Gallium | Ga | 30 | 5.90 | 619 | 742 | 907 | Al2O3 | Alloys with
refractory metals. (2) |
Galliuim Antimonide | GaSb | 710 | 5.60 | (3) | ||||
Gallium Arsenide | GaAs | 1238 | 5.30 | CG, G | N=5.64 @ 10.6 (2) | |||
Germanium | Ge | 937 | 5.35 | 812 | 957 | 1167 | Al2O3 | Excellent films.
N=4.01 (1) |
Germanium Oxide | GeO2 | 1086 | 6.24 | 625 | Al2O3,
Quartz |
Film
predominantly GeO (2) |
||
Glass Schott 8329 | 2.20 | Evaporate alkali glass. Melt in air before evaporating. N=1.47 (1) | ||||||
Gold | Au | 1062 | 19.32 | 807 | 947 | 1132 | CG,
BN, Al2O3 |
Films soft, not very adherent (1) |
Hafnium | Hf | 2230 | 13.09 | 2160 | 2250 | 3090 | (2) | |
Hafnium Oxide | HfO2 | 2812 | 9.68 | 2500 | Film HhfO n=2.0 @ .5µ (3) | |||
Holmium | Ho | 1470 | 8.80 | 650
Subl. |
770
Subl. |
950
Subl. |
(2) | |
Inconel | Ni/Cr/Fe | 1425 | 8.50 | Low rate required for smooth film. (2) | ||||
Indium | In | 157 | 7.30 | 487 | 597 | 742 | Mo | Wets W and Cu; use Mo liner. (1) |
Indium Oxide | In2O3 | 1565 | 7.18 | Subl. | Subl. | 1200
Subl. |
Al2O3 | Film In2O transparent
conductor (2) |
Iridium | Ir | 2459 | 22.65 | 1850 | 2080 | 2380 | (3) | |
Iron | Fe | 1535 | 7.86 | 858 | 998 | 1180 | Al2O3 | Attacks W. films hard, smooth. Use gentle preheat to
outgas. (1) |
Iron Oxide | FeO | 1425 | 5.70 | Decomposes. (1) | ||||
Iron Oxide | Fe2O3 | 1565 | 5.24 | Disproportionate
to Fe3O4 at 1530C n=3.0. (2) |
||||
Lanthanum | La | 920 | 6.17 | 990 | 1212 | 1388 | Al2O3 | Films will burn in air if scraped. (1) |
Lanthanum
Boride |
LaB6 | 2210 | 2.61 | (2) | ||||
Lanthanum Fluoride | LaF3 | 1490 | 6.0 | Subl. | Subl. | 900
Subl. |
No decomposition
n=1.59 @ .55µ (2) |
|
Lanthanum
Oxide |
La2O3 | 2250 | 5.84 | 5.84 | 1400 | Loses Oxygen
n=1.9 @ .5µ (2) |
||
Lead | Pb | 328 | 11.34 | 342 | 427 | 497 | Al2O3 | Toxic. Carefully controlled rates
required for superconductors. (1) |
Lithium | Li | 179 | 0.53 | 227 | 307 | 407 | Al2O3 | Metal reacts
violently in air. (2) |
Lithium Fluoride | LiF | 870 | 2.60 | 875 | 1020 | 1180 | Al2O3 | Rate control important for optical films. Use gentle preheat to
outgas. N=1.36 (2) |
Lutetium | Lu | 1652 | 9.84 | 1300 | Al2O3 | (1) | ||
Magnesium | Mg | 651 | 1.74 | 185
Subl. |
247
Subl. |
327
Subl. |
CG, Al2O3 | Extremely high rates possible. (2) |
Magnesium Aluminate | MgAl2O4 | 2135 | 3.60 | Natural spinel. (2) | ||||
Magnesium Fluoride | MgF2 | 1266 | 2.90-3.20 | 100 | Al2O3 | Rate control and substrate heat important for optical films.
N=1.38 (1) |
||
Magnesium Oxide | MgO | 2800 | 3.58 | 1300 | CG, G Al2O3 | W produces
volatile oxides. N=1.7 (2) |
||
Manganese | Mn | 1244 | 7.20 | 507
Subl. |
572
Subl. |
647
Subl. |
Al2O3 | (2) |
Molybdenum | Mo | 2610 | 10.22 | 1592 | 1822 | 2117 | Films hard smooth.
Careful degas required. (1) |
|
Molybdenum
Boride |
MoB2 | 2100 | 7.12 | (4) | ||||
Molybdenum Carbide | Mo2C | 2687 | 9.18 | Evaporation of
Mo(Co)6 yields Mo2C |
||||
Neodymium | Nd | 1024 | 7.00 | 7.31 | 871 | 1062 | Al2O3 | Low Ta solubility.
(1) |
Neodymium Fluoride | NdF3 | 1410 | 6.50 | 900 | Al2O3 | Very little decomposition.
N=1.61 @ .55µ (2) |
||
Neodymium Oxide | Nd2O3 | 2272 | 7.24 | 1400 | Loses Oxygen, films clear.
Hydroscopic n=1.79 n varies with substrate temp. (2) |
|||
Nichrome IV | Ni/Cr | 1395 | 8.50 | 847 | 987 | 1217 | CG, Al2O3 | Alloys with refractory metals. (1) |
Nickel | Ni | 1453 | 8.90 | 927 | 1072 | 1262 | CG, Al2O3 | Alloys with refractory metals. Forms smooth
adherent films. (1) |
Niobium (Columbium) | Nb | 2468 | 8.55 | 1728 | 1977 | 2287 | Attacks W. (1) | |
Niobium
Carbide |
NbC | 3800 | 7.82 | (3) | ||||
Niobium – Tin | Nb3Sn | Co-evaporate from two sources. (1) | ||||||
Osmium | Os | 1700 | 22.50 | 2170 | 2430 | 2760 | (3) | |
Palladium | Pd | 1550 | 12.40 | 842 | 992 | 1192 | Al2O3 | Alloys with refractory metals;
rapid evaporation suggested. Spits. (1) |
Permalloy | Ni/F | 1395 | 8.70 | 947 | 1047 | 1307 | CG, Al2O3 | Films low in Ni content use 84%
Ni source. (2) |
Platinum | Pt | 1769 | 21.45 | 1292 | 1492 | 1747 | CG | Alloys with metals.
Films soft poor adhesion. (1) |
Potassium
Chloride |
KCl | 776 | 1.98 | 510 | Use gentle preheat
to outgas. n=1.49 (2) |
|||
Potassium Fluoride | KF | 880 | 2.48 | 500 | Use gentle preheat to outgas. n=1.49 (2) | |||
Praseodymium | Pr | 931 | 6.78 | 800 | 950 | 1150 | (2) | |
Praseodymium
Oxide |
Pr2O3 | 2125 | 6.88 | 1400 | Loses Oxygen.
N=2.0 (2) |
|||
Rhenium | Re | 3180 | 20.53 | 1928 | 2207 | 2571 | (1) | |
Rhodium | Rh | 1966 | 12.41 | 1277 | 1472 | 1707 | CG | (2) |
Ruthenium | Ru | 2700 | 12.45 | 1780 | 1990 | 2260 | Splits violently. Requires degas. (1) | |
Samarium | Sm | 1072 | 7.54 | 373 | 460 | 573 | Al2O3 | (2) |
Samarium Oxide | Sm2O3 | 2350 | 7.43 | Loses O2 Films smooth, clear. (2) | ||||
Samarium
Sulfide |
Sm2S3 | 1900 | 5.72 | (2) | ||||
Scandium | Sc | 1539 | 2.99 | 714 | 837 | 1002 | Al2O3 | Alloys with Ta (1) |
Scandium Oxide | 2300 | 8.86 | 400 | Loses Oxygen
n=1.88 @ .5µ (3) |
||||
Selenium | Se | 217 | 4.79 | 89 | 125 | 170 | CG, Al2O3 | Toxic. Poisons vacuum systems. (2) |
Silicon | Si | 1410 | 2.42 | 992 | 1147 | 1337 | CG, Ta | Alloys with W. SiO produced above 4X10-6torr.
N=3.42 (3) |
Silicon Boride | SiB6 | 2.47 | (4) | |||||
Silicon Dioxide | SiO2 | 1610-1710 | 2.20-2.70 | 1025 | N=1.47 Tunnels must be swept. (1) | |||
Silicon Monoxide | SiO | 1702 | 2.10 | Subl. | Subl. | 850
Subl. |
Ta | Low rate suggested.
N=1.6 (3) |
Silver | Ag | 961 | 10.49 | 847
958 |
1105 | Mo, Al2O3 | (1) | |
Sodium
Chloride |
NaCl | 801 | 2.16 | 530 | N=1.54 (2) | |||
Sodium Fluoriide | NaF | 988 | 2.79 | 700 | Use gentle preheat. No decomposition.
n=1.30 @ .55µ (2) |
|||
Spinel | MgO3 5Al2O3 | 8.00 | N=1.72 (2) | |||||
Strontium | Sr | 769 | 2.60 | 239 | 309 | 403 | CG | Wets but does not alloy refractory metals. May react violently in air. |
Sulfur | S8 | 115 | 2.00 | 13 | 19 | 57 | Poisons vacuum system. (1) | |
Supermalloy | Ni/Fe/Mo | 1410 | 8.90 | Co-evaporate from two sources, Prmalloy and Mo.
(2) |
||||
Tantalum | Ta | 2996 | 16.60 | 1960 | 2240 | 2590 | Forms good films. (1) | |
Tantalum Pentoxide | Ta2O5 | 1800 | 8.74 | 1550 | 1780 | 1920 | CG | Slight decomposition; evaporate in 10-3 torr of O2 n=2.0 @1.5µ (2) |
Tellurium | Te | 452 | 6.25 | 157 | 207 | 277 | Al2O3 | Wets w/o alloying Toxic (4) |
Terbium | Tb | 1357 | 8.27 | 800 | 850 | 1150 | Al2O3 | (1) |
Thallium | Tl | 302 | 11.85 | 280 | 360 | 470 | Al2O3 | Wets freely, very
toxic. (1) |
Thorium | Th | 1875 | 11.70 | 1430 | 1660 | 1925 | Toxic, radioactive. (1) | |
Thorium Dioxide | ThO2 | 3050 | 10.03 | 2100 | Radioactive.
N=1.86 @ 2.2µ (1) |
|||
Thorium Fluoride | ThF4 | 1110 | 6.30 | 750 | CG | Radioactive n=1.52 Heat substrate to above
1500C (3) |
||
Thulium | Tm | 1545 | 9.32 | 461
Subl. |
554
Subl. |
680
Subl. |
Al2O3 | (2) |
Tin | Sn | 232 | 7.75 | 682 | 807 | 997 | Ta, Al2O3 | Wets Mo, use Ta liner. (1) |
Tin Oxide | SnO2 | 1127 | 6.95 | Subl. | Subl. | 1000
Subl. |
Al2O3 | N=2.0 (1) |
Tin Selenide | SnSe | 861 | 6.18 | 400 | (2) | |||
Titanium | Ti | 1675 | 4.50 | 1067 | 1235 | 1453 | Alloys with refractory metals;
evolves gas on first heating. (1) |
|
Titanium
Boride |
TiB2 | 2980 | 4.50 | (4) | ||||
Titanium Dioxide (rutile) | TiO2 | 1640 | 4.29 | 1300 | Evaporate in 10-4
of O2 onto 350 C substrates. N=2.4 (3) |
|||
Titanium Monoxide | TiO | 1750 | 4.93 | 1500 | CG | Use gentle preheat to outgas. (2) | ||
Titanium Nitride | TiN | 2930 | 5.43 | Decomposes. (2) | ||||
Tungsten | W | 3410 | 19.30 | 2117 | 2407 | 2757 | Forms violate oxides. Films hard
& adherent. (2) |
|
Tungsten Carbide | W2C | 2860 | 17.15 | 1480 | 1720 | 2120 | (1) | |
Tungsten Trioxide | WO3 | 1473 | 7.16 | Subl. | Subl. | 980
Subl. |
Use gentle preheat to outgas. n=1.68
(2) |
|
Uranium | U | 1132 | 19.07 | 1132 | 1327 | 1582 | Films oxidize. (2) | |
Vanadium | V | 1890 | 5.96 | 1162 | 1332 | 1547 | Wets Mo. (1) | |
Ytterbium | Yb | 824 | 6.98 | 520
Subl. |
590
Subl. |
690
Subl. |
(2) | |
Yttrium | Y | 1509 | 4.48 | 830 | 973 | 1157 | Al2O3 | High Ta solubility.
(1) |
Yttrium
Aluminum Oxide |
Y3Al5O12 | 1990 | Films not ferroelectric | |||||
Yttrium Oxide | Y2O3 | 2680 | 4.84 | Subl. | Subl. | 2000 | Al2O3, G | Loses oxygen, films smooth and clear. N=1.79 @
1µ (2) |
Zinc | Zn | 419 | 7.14 | 127 | 177 | 250 | Al2O3 | (1) |
Zinc Oxide | ZnO | 1975 | 5.61 | 1800 | Anneal in air at 450C to reoxidize. N=2.0
(3) |
|||
Zinc Sulfide | ZnS | 1830 | 4.09 | Subl. | Subl. | 800 | Use gentle preheat to gegas. Films partle decompose Sticking coefficient varies with substrate
temp. n=2.3 @ .5µ (2) |
|
Zirconium | Zr | 1852 | 6.40 | 1477 | 1702 | 1987 | Alloys with W. Films oxide
readily. (1) |
|
Zirconium Boride | ZrB2 | 3040 | 6.08 | (2) | ||||
Zirconium Oxide | ZrO2 | 2700 | 5.49 | 2200 | Films oxide deficient, clear and hard. N=2.05 @ .75µ (2) |
Legend
(1) Excellent material for electron beam evaporation.
(2) Good material for electron beam evaporation.
(3) Fair material for electron beam evaporation.
(4) Poor material for electron beam evaporation.
Subl. Subliming Material n Index of Refraction
G Graphite Liner
CG Coated Graphite Liner Al2O3 Alumina Liner
BN Boron Nitride Liner Mo Molybdenum Liner Ta Tantalum Liner